Determination of PMMA block semiconductor / Nur Dzaina Zaidel

In this study, the Poly methyl metacrylate (PMMA) block was irradiated using Electron beam accelerator at 50kGY. The band gap energy obtained from this irradiated PMMA sample was 3.4450 eV which fall in the range of most common semiconductor. From the hot probe measurement it was found that this...

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Main Author: Zaidel, Nur Dzaina
Format: Student Project
Language:English
Published: Faculty of Applied Sciences 2009
Subjects:
Online Access:https://ir.uitm.edu.my/id/eprint/766/
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author Zaidel, Nur Dzaina
author_facet Zaidel, Nur Dzaina
author_sort Zaidel, Nur Dzaina
building UiTM Institutional Repository
collection Online Access
description In this study, the Poly methyl metacrylate (PMMA) block was irradiated using Electron beam accelerator at 50kGY. The band gap energy obtained from this irradiated PMMA sample was 3.4450 eV which fall in the range of most common semiconductor. From the hot probe measurement it was found that this irradiated PMMA was n-type semiconductor. Therefore it was can be concluded that the charge carries in this irradiated system was electrons. These electrons were release from the breaking of –CH bond of the methylene group –CH2, and the CH3 group of PMMA structure that had been confirmed from the Fourier Transform Infrared (FTIR) analysis. The decreased in the glass transition temperature, Tg and the decomposition temperature of the irradiated PMMA system observed from the Differential Scanning Calorimetry (DSC) and Thermogravimetric analysis (TGA) thermograms supported the occurrence of bond breaking. ix
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publishDate 2009
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spelling uitm-7662018-10-24T02:39:46Z https://ir.uitm.edu.my/id/eprint/766/ Determination of PMMA block semiconductor / Nur Dzaina Zaidel Zaidel, Nur Dzaina QD Chemistry In this study, the Poly methyl metacrylate (PMMA) block was irradiated using Electron beam accelerator at 50kGY. The band gap energy obtained from this irradiated PMMA sample was 3.4450 eV which fall in the range of most common semiconductor. From the hot probe measurement it was found that this irradiated PMMA was n-type semiconductor. Therefore it was can be concluded that the charge carries in this irradiated system was electrons. These electrons were release from the breaking of –CH bond of the methylene group –CH2, and the CH3 group of PMMA structure that had been confirmed from the Fourier Transform Infrared (FTIR) analysis. The decreased in the glass transition temperature, Tg and the decomposition temperature of the irradiated PMMA system observed from the Differential Scanning Calorimetry (DSC) and Thermogravimetric analysis (TGA) thermograms supported the occurrence of bond breaking. ix Faculty of Applied Sciences 2009 Student Project NonPeerReviewed text en https://ir.uitm.edu.my/id/eprint/766/1/PPb_NUR%20DZAINA%20ZAIDEL%20AS%2009_5%20P01.pdf Zaidel, Nur Dzaina (2009) Determination of PMMA block semiconductor / Nur Dzaina Zaidel. (2009) [Student Project] <http://terminalib.uitm.edu.my/766.pdf> (Unpublished)
spellingShingle QD Chemistry
Zaidel, Nur Dzaina
Determination of PMMA block semiconductor / Nur Dzaina Zaidel
title Determination of PMMA block semiconductor / Nur Dzaina Zaidel
title_full Determination of PMMA block semiconductor / Nur Dzaina Zaidel
title_fullStr Determination of PMMA block semiconductor / Nur Dzaina Zaidel
title_full_unstemmed Determination of PMMA block semiconductor / Nur Dzaina Zaidel
title_short Determination of PMMA block semiconductor / Nur Dzaina Zaidel
title_sort determination of pmma block semiconductor / nur dzaina zaidel
topic QD Chemistry
url https://ir.uitm.edu.my/id/eprint/766/