Dimensional effect of doped porous ge using SILVACO TCAD simulation for potential optoelectronics application / A.F. Abd Rahim …[et al.]

Dimensional effect of doped porous ge using SILVACO TCAD simulation for potential optoelectronics application / A.F. Abd Rahim …[et al.]

Ge is considered to have several advantages over Si due to its high mobility and direct band gap, which makes it ideal for optoelectronic applications. The manipulation of bulk Ge into small structures has drawn a lot of interest due to the numerous distinctive properties caused by the impact of siz...

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Bibliographic Details
Main Authors: Abd Rahim, A.F., Mohamad Shuhaimi, N. S. I., Mohd Razal, N. S., Radzali, R., Mahmood, A., Hamzah, I.H., Packeer Mohamed, M F
Format: Article
Language:English
Published: Universiti Teknologi MARA Cawangan Pulau Pinang 2021
Subjects:
Electricity and magnetism
Doping
Online Access:https://ir.uitm.edu.my/id/eprint/2917/

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