Optimization of dc and rf performances using multiple-gated high electron mobility transistor (HEMT) / Mohd Nizam Osman

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Optimization of dc and rf performances using multiple-gated high electron mobility transistor (HEMT) / Mohd Nizam Osman

This study carried out a detail analysis of the perform anc e of HEMT device with various numb ers of gate finger s with respect to their DC and RF performances. The dev ices were fabrica ted by a Plessey found ry which adapted a HEMT process with 0.2 um GaAs technology. A few stages were tak en...

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Bibliographic Details
Main Author:	Osman, Mohd Nizam
Format:	Thesis
Language:	English
Published:	2009
Subjects:	Elementary particle physics Applications of electronics
Online Access:	https://ir.uitm.edu.my/id/eprint/27375/

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