Defect characteristic of oxygen-deficient Ge-doped preform using photoluminescence spectroscopy

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Defect characteristic of oxygen-deficient Ge-doped preform using photoluminescence spectroscopy

Study has been made of the Photoluminescence properties of Ge-doped silica preforms fabricated using the MCVD process and subsequently subjected to γ-ray irradiation. The photoluminescence emissions pointed to the presence of defects related to oxygen vacancies. Two types of preform were fabricated,...

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Bibliographic Details
Main Authors:	Siti Shafiqah, A.S., Sani, S.F. A., Tamchek, N., Almugren, K.S., Alkallas, F.H., Bradley, D.A. *
Format:	Article
Published:	Elsevier 2023
Subjects:	QC Physics TA Engineering (General). Civil engineering (General)
Online Access:	http://eprints.sunway.edu.my/2274/

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