A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist

Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical a...

Full description

Bibliographic Details
Main Authors: Gibbons, Francis, Mohd Zaid, Hasnah, Robinson, A.P.G.
Format: Article
Language:English
Published: 2007
Subjects:
Online Access:http://scholars.utp.edu.my/id/eprint/886/
http://scholars.utp.edu.my/id/eprint/886/1/Small_2007.PDF
_version_ 1848659053380632576
author Gibbons, Francis
Mohd Zaid, Hasnah
Robinson, A.P.G.
author_facet Gibbons, Francis
Mohd Zaid, Hasnah
Robinson, A.P.G.
author_sort Gibbons, Francis
building UTP Institutional Repository
collection Online Access
description Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20-nm line widths are patterned.
first_indexed 2025-11-13T07:24:18Z
format Article
id oai:scholars.utp.edu.my:886
institution Universiti Teknologi Petronas
institution_category Local University
language English
last_indexed 2025-11-13T07:24:18Z
publishDate 2007
recordtype eprints
repository_type Digital Repository
spelling oai:scholars.utp.edu.my:8862017-01-19T08:26:51Z http://scholars.utp.edu.my/id/eprint/886/ A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist Gibbons, Francis Mohd Zaid, Hasnah Robinson, A.P.G. QC Physics Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20-nm line widths are patterned. 2007-11-15 Article PeerReviewed application/pdf en http://scholars.utp.edu.my/id/eprint/886/1/Small_2007.PDF Gibbons, Francis and Mohd Zaid, Hasnah and Robinson, A.P.G. (2007) A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist. Small, 3 (12). pp. 2076-2080. 10.1002/smll.200700324 10.1002/smll.200700324
spellingShingle QC Physics
Gibbons, Francis
Mohd Zaid, Hasnah
Robinson, A.P.G.
A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist
title A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist
title_full A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist
title_fullStr A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist
title_full_unstemmed A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist
title_short A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist
title_sort chemically amplified fullerene-derivative molecular electron-beam resist
topic QC Physics
url http://scholars.utp.edu.my/id/eprint/886/
http://scholars.utp.edu.my/id/eprint/886/
http://scholars.utp.edu.my/id/eprint/886/1/Small_2007.PDF