A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist
Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical a...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2007
|
| Subjects: | |
| Online Access: | http://scholars.utp.edu.my/id/eprint/886/ http://scholars.utp.edu.my/id/eprint/886/1/Small_2007.PDF |
| Summary: | Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20-nm line widths are patterned. |
|---|