Chemically amplified molecular resists for electron beam lithography

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Chemically amplified molecular resists for electron beam lithography

Molecular resists, such as fullerene and triphenylene derivatives, use small carbon rich molecules, which give the potential for greater resolution, lower line edge roughness and higher etch durability than traditional polymeric materials. Their main limitation has been low sensitivity to irradiat...

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Bibliographic Details
Main Authors:	Robinson, A.P.G, Mohd Zaid, Hasnah
Format:	Article
Language:	English
Published:	2006
Subjects:	QC Physics
Online Access:	http://scholars.utp.edu.my/id/eprint/882/ http://scholars.utp.edu.my/id/eprint/882/1/Micro_Eng_2006.pdf

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