Chemical Amplification of a Triphenylene Molecular Electron Beam Resist

Molecular resists, such as triphenylene derivatives, are small carbon rich molecules, and thus give the potential for higher lithographic resolution and etch durability, and lower line width roughness than traditional polymeric compounds. Their main limitation to date has been poor sensitivity. A...

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Main Author: Mohd Zaid, Hasnah
Format: Article
Language:English
Published: 2007
Subjects:
Online Access:http://scholars.utp.edu.my/id/eprint/502/
http://scholars.utp.edu.my/id/eprint/502/2/Triphenylene.pdf
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author Mohd Zaid, Hasnah
author_facet Mohd Zaid, Hasnah
author_sort Mohd Zaid, Hasnah
building UTP Institutional Repository
collection Online Access
description Molecular resists, such as triphenylene derivatives, are small carbon rich molecules, and thus give the potential for higher lithographic resolution and etch durability, and lower line width roughness than traditional polymeric compounds. Their main limitation to date has been poor sensitivity. A new triphenylene derivative molecular resist, with pendant epoxy groups to aid chemically amplified crosslinking, was synthesized and characterized. The sensitivity of the negative tone, pure triphenylene derivative when exposed to an electron beam with energy 20 keV was ~610–4 Ccm–2, which increased substantially to ~ 1.5 10–5 Ccm–2 after chemical amplification (CA) using a cationic photoinitiator. This was further improved, by the addition of a second triphenylene derivative, to ~710–6 Ccm–2. The chemically amplified resist demonstrated a high etch durability comparable with the novolac resist SAL 601. Patterns with a minimum feature size of ~ 40 nm were realized in the resist with a 30 keV electron beam
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spelling oai:scholars.utp.edu.my:5022017-01-19T08:27:08Z http://scholars.utp.edu.my/id/eprint/502/ Chemical Amplification of a Triphenylene Molecular Electron Beam Resist Mohd Zaid, Hasnah QC Physics Molecular resists, such as triphenylene derivatives, are small carbon rich molecules, and thus give the potential for higher lithographic resolution and etch durability, and lower line width roughness than traditional polymeric compounds. Their main limitation to date has been poor sensitivity. A new triphenylene derivative molecular resist, with pendant epoxy groups to aid chemically amplified crosslinking, was synthesized and characterized. The sensitivity of the negative tone, pure triphenylene derivative when exposed to an electron beam with energy 20 keV was ~610–4 Ccm–2, which increased substantially to ~ 1.5 10–5 Ccm–2 after chemical amplification (CA) using a cationic photoinitiator. This was further improved, by the addition of a second triphenylene derivative, to ~710–6 Ccm–2. The chemically amplified resist demonstrated a high etch durability comparable with the novolac resist SAL 601. Patterns with a minimum feature size of ~ 40 nm were realized in the resist with a 30 keV electron beam 2007 Article PeerReviewed application/pdf en http://scholars.utp.edu.my/id/eprint/502/2/Triphenylene.pdf Mohd Zaid, Hasnah (2007) Chemical Amplification of a Triphenylene Molecular Electron Beam Resist. Advanced Functional Material. pp. 1-6.
spellingShingle QC Physics
Mohd Zaid, Hasnah
Chemical Amplification of a Triphenylene Molecular Electron Beam Resist
title Chemical Amplification of a Triphenylene Molecular Electron Beam Resist
title_full Chemical Amplification of a Triphenylene Molecular Electron Beam Resist
title_fullStr Chemical Amplification of a Triphenylene Molecular Electron Beam Resist
title_full_unstemmed Chemical Amplification of a Triphenylene Molecular Electron Beam Resist
title_short Chemical Amplification of a Triphenylene Molecular Electron Beam Resist
title_sort chemical amplification of a triphenylene molecular electron beam resist
topic QC Physics
url http://scholars.utp.edu.my/id/eprint/502/
http://scholars.utp.edu.my/id/eprint/502/2/Triphenylene.pdf