The role of Al2O3 buffer layer in the growth of aligned CNTs
Carbon nanotube (CNT) can be thought of as a hexagonal network of carbon atoms that has been rolled up to make a seamless cylinder. If they are consisting of one layer, they are termed singled-walled CNTs (SWNTs) while if there are multiple walls, they are called multi-walled CNTs (MWNTs). For most...
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| Format: | Conference or Workshop Item |
| Language: | English |
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2008
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| Online Access: | http://scholars.utp.edu.my/id/eprint/445/ http://scholars.utp.edu.my/id/eprint/445/1/paper.pdf |
| _version_ | 1848658988861751296 |
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| author | K.M., Begam M.K., Lai N.M., Mohamed |
| author_facet | K.M., Begam M.K., Lai N.M., Mohamed |
| author_sort | K.M., Begam |
| building | UTP Institutional Repository |
| collection | Online Access |
| description | Carbon nanotube (CNT) can be thought of as a hexagonal network of carbon atoms that has been rolled up to make a seamless cylinder. If they are consisting of one layer, they are termed singled-walled CNTs (SWNTs) while if there are multiple walls, they are called multi-walled CNTs (MWNTs). For most functional devices application, an aligned arrangement of CNTs is desired. Aligned multiwalled carbon nanotubes (MWNTs) have been successfully grown by the inclusion of a buffer layer of oxidized Al. An Al<sub>2</sub>O<sub>3</sub> layer has been proven to be an important contributing factor towards obtaining good quality aligned CNTs. In this work, Al is deposited onto the Si wafer using electron beam evaporation and later oxidized by heating in air. A thin layer of iron catalyst is then deposited on top of the oxidized Al layer and annealed at 400°C. The result shows an improvement in the intensity of the graphitization peak (G-band) in the Raman spectra and aligned MWNTs is observed in these samples compared to the ones that have undergone the same process parameter except the Al<sub>2</sub>O<sub>3</sub> layer.
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| first_indexed | 2025-11-13T07:23:17Z |
| format | Conference or Workshop Item |
| id | oai:scholars.utp.edu.my:445 |
| institution | Universiti Teknologi Petronas |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-13T07:23:17Z |
| publishDate | 2008 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | oai:scholars.utp.edu.my:4452017-01-19T08:26:32Z http://scholars.utp.edu.my/id/eprint/445/ The role of Al2O3 buffer layer in the growth of aligned CNTs K.M., Begam M.K., Lai N.M., Mohamed TK Electrical engineering. Electronics Nuclear engineering Carbon nanotube (CNT) can be thought of as a hexagonal network of carbon atoms that has been rolled up to make a seamless cylinder. If they are consisting of one layer, they are termed singled-walled CNTs (SWNTs) while if there are multiple walls, they are called multi-walled CNTs (MWNTs). For most functional devices application, an aligned arrangement of CNTs is desired. Aligned multiwalled carbon nanotubes (MWNTs) have been successfully grown by the inclusion of a buffer layer of oxidized Al. An Al<sub>2</sub>O<sub>3</sub> layer has been proven to be an important contributing factor towards obtaining good quality aligned CNTs. In this work, Al is deposited onto the Si wafer using electron beam evaporation and later oxidized by heating in air. A thin layer of iron catalyst is then deposited on top of the oxidized Al layer and annealed at 400°C. The result shows an improvement in the intensity of the graphitization peak (G-band) in the Raman spectra and aligned MWNTs is observed in these samples compared to the ones that have undergone the same process parameter except the Al<sub>2</sub>O<sub>3</sub> layer. 2008 Conference or Workshop Item PeerReviewed application/pdf en http://scholars.utp.edu.my/id/eprint/445/1/paper.pdf K.M., Begam and M.K., Lai and N.M., Mohamed (2008) The role of Al2O3 buffer layer in the growth of aligned CNTs. In: International Conference on Frontiers in Materials Science and Technology, FMST 2008, 26 March 2008 through 28 March 2008, Brisbane, QLD. http://www.scopus.com/inward/record.url?eid=2-s2.0-45749088120&partnerID=40&md5=df104fefdf4ca33cac18c86f88d19cbc |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering K.M., Begam M.K., Lai N.M., Mohamed The role of Al2O3 buffer layer in the growth of aligned CNTs |
| title | The role of Al2O3 buffer layer in the growth of aligned CNTs |
| title_full | The role of Al2O3 buffer layer in the growth of aligned CNTs |
| title_fullStr | The role of Al2O3 buffer layer in the growth of aligned CNTs |
| title_full_unstemmed | The role of Al2O3 buffer layer in the growth of aligned CNTs |
| title_short | The role of Al2O3 buffer layer in the growth of aligned CNTs |
| title_sort | role of al2o3 buffer layer in the growth of aligned cnts |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://scholars.utp.edu.my/id/eprint/445/ http://scholars.utp.edu.my/id/eprint/445/ http://scholars.utp.edu.my/id/eprint/445/1/paper.pdf |