Performance analysis of si schottky diode family in DC-DC converter

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Performance analysis of si schottky diode family in DC-DC converter

The unipolar-based devices, silicon schottky (Si) and silicon carbide schottky (SiC) power diodes are investigated for their reverse recovery transient responses and the effects on the switching losses of the MOSFET in the DC-DC converter. Two sets of inductive load chopper circuits are simulated us...

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Bibliographic Details
Main Authors:	N.Z., Yahaya, F.H., Ramle
Format:	Conference or Workshop Item
Language:	English
Published:	2009
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://scholars.utp.edu.my/id/eprint/331/ http://scholars.utp.edu.my/id/eprint/331/1/paper.pdf

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