Performance analysis of si schottky diode family in DC-DC converter

The unipolar-based devices, silicon schottky (Si) and silicon carbide schottky (SiC) power diodes are investigated for their reverse recovery transient responses and the effects on the switching losses of the MOSFET in the DC-DC converter. Two sets of inductive load chopper circuits are simulated us...

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Main Authors: N.Z., Yahaya, F.H., Ramle
Format: Conference or Workshop Item
Language:English
Published: 2009
Subjects:
Online Access:http://scholars.utp.edu.my/id/eprint/331/
http://scholars.utp.edu.my/id/eprint/331/1/paper.pdf
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author N.Z., Yahaya
F.H., Ramle
author_facet N.Z., Yahaya
F.H., Ramle
author_sort N.Z., Yahaya
building UTP Institutional Repository
collection Online Access
description The unipolar-based devices, silicon schottky (Si) and silicon carbide schottky (SiC) power diodes are investigated for their reverse recovery transient responses and the effects on the switching losses of the MOSFET in the DC-DC converter. Two sets of inductive load chopper circuits are simulated using PSpice software to determine the effectiveness and superiority in each of the devices. All parameter settings are consistent for both converter circuits. The results have shown that the SiC diode has higher energy savings of more than 73.13 % in turn-off switching losses. This eventually corresponds to the reduction of 96.16 % in MOSFET turn-on peak power dissipation of SiC converter. However, there is a minor drawback in efficiency of the converter. Some detailed analyses are presented in the paper. © 2009 IEEE.
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format Conference or Workshop Item
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institution Universiti Teknologi Petronas
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language English
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spelling oai:scholars.utp.edu.my:3312017-01-19T08:25:52Z http://scholars.utp.edu.my/id/eprint/331/ Performance analysis of si schottky diode family in DC-DC converter N.Z., Yahaya F.H., Ramle TK Electrical engineering. Electronics Nuclear engineering The unipolar-based devices, silicon schottky (Si) and silicon carbide schottky (SiC) power diodes are investigated for their reverse recovery transient responses and the effects on the switching losses of the MOSFET in the DC-DC converter. Two sets of inductive load chopper circuits are simulated using PSpice software to determine the effectiveness and superiority in each of the devices. All parameter settings are consistent for both converter circuits. The results have shown that the SiC diode has higher energy savings of more than 73.13 % in turn-off switching losses. This eventually corresponds to the reduction of 96.16 % in MOSFET turn-on peak power dissipation of SiC converter. However, there is a minor drawback in efficiency of the converter. Some detailed analyses are presented in the paper. © 2009 IEEE. 2009 Conference or Workshop Item NonPeerReviewed application/pdf en http://scholars.utp.edu.my/id/eprint/331/1/paper.pdf N.Z., Yahaya and F.H., Ramle (2009) Performance analysis of si schottky diode family in DC-DC converter. In: 2009 International Conference on Electrical Engineering and Informatics, ICEEI 2009, 5 August 2009 through 7 August 2009, Selangor. http://www.scopus.com/inward/record.url?eid=2-s2.0-70449635689&partnerID=40&md5=9f2cec9cf9448cb8cae573f79bdbbfe7
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
N.Z., Yahaya
F.H., Ramle
Performance analysis of si schottky diode family in DC-DC converter
title Performance analysis of si schottky diode family in DC-DC converter
title_full Performance analysis of si schottky diode family in DC-DC converter
title_fullStr Performance analysis of si schottky diode family in DC-DC converter
title_full_unstemmed Performance analysis of si schottky diode family in DC-DC converter
title_short Performance analysis of si schottky diode family in DC-DC converter
title_sort performance analysis of si schottky diode family in dc-dc converter
topic TK Electrical engineering. Electronics Nuclear engineering
url http://scholars.utp.edu.my/id/eprint/331/
http://scholars.utp.edu.my/id/eprint/331/
http://scholars.utp.edu.my/id/eprint/331/1/paper.pdf