Improved critical current density in Zn doped YBCO single crystals
Magnetic measurements were made using pure YBCO and Zn doped YBa2(Cu1-xZnx)(3)O7-sigma Single crystals with Zn concentration of 0 5%, 1 5%, 3 0% and 4 3% The magnetic hysteresis loops for these samples were measured in the temperature range 0 1 <= T/T-c <= 0 96 under magnetic fields of 5 T us...
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ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
2010
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| Online Access: | http://scholars.utp.edu.my/id/eprint/2356/ http://scholars.utp.edu.my/id/eprint/2356/1/SAMPLE_PAPER_PDF.pdf |
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| author | Manzoor, Hussain Koki, Takita |
| author_facet | Manzoor, Hussain Koki, Takita |
| author_sort | Manzoor, Hussain |
| building | UTP Institutional Repository |
| collection | Online Access |
| description | Magnetic measurements were made using pure YBCO and Zn doped YBa2(Cu1-xZnx)(3)O7-sigma Single crystals with Zn concentration of 0 5%, 1 5%, 3 0% and 4 3% The magnetic hysteresis loops for these samples were measured in the temperature range 0 1 <= T/T-c <= 0 96 under magnetic fields of 5 T using SQUID. It was found that the critical current density J(c) increased for low Zn content samples up to 3% Zn concentration compared to pure YBCO sample and decreased for the higher Zn content samples These values varied consistently when compared at magnetic fields of 1 T and 3 T Moreover Zn doped samples showed significant values of J(c) in the temperature range of 0.7-0.97(c), close to critical temperature compared to pure YBCO sample. The irreversibility field H-irr was also enhanced in this temperature range showing consistent decrease with increase of Zn concentration. The peak field H-p above H-c1 and irreversibility field H-irr, both show power law dependence of the form H = m(1)(1 - T/T-c)(m2) in the temperature range of 0 75-0.96T(c). The values of parameter m(2) increased from 1 44 to 1.95 for the samples up to 3% Zn content and decreased to 1.37 for higher Zn contents The ratio H-irr/H-p was found to be 3-4 for the lower Zn content samples and was 7-8 for the sample with high Zn content indicating more disorder for higher Zn content samples The region between peak field H-p and irreversibility field H-irr was broadened with the increase of Zn concentration. The strong effect of Zn substitution in modifying behavior of these samples even at elevated temperatures is possibly due to the changes in the anisotropy of our samples with the increase of Zn concentration and also due to the locally induced changes in magnetic moments by Zn substitution (C) 2010 Published by Elsevier B.V. |
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| institution | Universiti Teknologi Petronas |
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| language | English |
| last_indexed | 2025-11-13T07:27:14Z |
| publishDate | 2010 |
| publisher | ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
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| spelling | oai:scholars.utp.edu.my:23562017-01-19T08:24:26Z http://scholars.utp.edu.my/id/eprint/2356/ Improved critical current density in Zn doped YBCO single crystals Manzoor, Hussain Koki, Takita TK Electrical engineering. Electronics Nuclear engineering Magnetic measurements were made using pure YBCO and Zn doped YBa2(Cu1-xZnx)(3)O7-sigma Single crystals with Zn concentration of 0 5%, 1 5%, 3 0% and 4 3% The magnetic hysteresis loops for these samples were measured in the temperature range 0 1 <= T/T-c <= 0 96 under magnetic fields of 5 T using SQUID. It was found that the critical current density J(c) increased for low Zn content samples up to 3% Zn concentration compared to pure YBCO sample and decreased for the higher Zn content samples These values varied consistently when compared at magnetic fields of 1 T and 3 T Moreover Zn doped samples showed significant values of J(c) in the temperature range of 0.7-0.97(c), close to critical temperature compared to pure YBCO sample. The irreversibility field H-irr was also enhanced in this temperature range showing consistent decrease with increase of Zn concentration. The peak field H-p above H-c1 and irreversibility field H-irr, both show power law dependence of the form H = m(1)(1 - T/T-c)(m2) in the temperature range of 0 75-0.96T(c). The values of parameter m(2) increased from 1 44 to 1.95 for the samples up to 3% Zn content and decreased to 1.37 for higher Zn contents The ratio H-irr/H-p was found to be 3-4 for the lower Zn content samples and was 7-8 for the sample with high Zn content indicating more disorder for higher Zn content samples The region between peak field H-p and irreversibility field H-irr was broadened with the increase of Zn concentration. The strong effect of Zn substitution in modifying behavior of these samples even at elevated temperatures is possibly due to the changes in the anisotropy of our samples with the increase of Zn concentration and also due to the locally induced changes in magnetic moments by Zn substitution (C) 2010 Published by Elsevier B.V. ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS 2010-02-15 Article PeerReviewed application/pdf en http://scholars.utp.edu.my/id/eprint/2356/1/SAMPLE_PAPER_PDF.pdf Manzoor, Hussain and Koki, Takita (2010) Improved critical current density in Zn doped YBCO single crystals. PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS , 470 (4 ). 291-294 . ISSN 0921-4534 http://apps.isiknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=32&SID=X212JDdPAc7358p5C3D&page=1&doc=1 10.1016/j.physc.2010.01.032 10.1016/j.physc.2010.01.032 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Manzoor, Hussain Koki, Takita Improved critical current density in Zn doped YBCO single crystals |
| title | Improved critical current density in Zn doped YBCO single crystals |
| title_full | Improved critical current density in Zn doped YBCO single crystals |
| title_fullStr | Improved critical current density in Zn doped YBCO single crystals |
| title_full_unstemmed | Improved critical current density in Zn doped YBCO single crystals |
| title_short | Improved critical current density in Zn doped YBCO single crystals |
| title_sort | improved critical current density in zn doped ybco single crystals |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://scholars.utp.edu.my/id/eprint/2356/ http://scholars.utp.edu.my/id/eprint/2356/ http://scholars.utp.edu.my/id/eprint/2356/ http://scholars.utp.edu.my/id/eprint/2356/1/SAMPLE_PAPER_PDF.pdf |