Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications

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Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications

This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high volta...

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Bibliographic Details
Main Authors:	Nor Zaihar, Yahaya, Mumtaj Begam Kassim, Raethar, Mohammad, Awan
Format:	Article
Language:	English
Published:	KOREAN INST POWER ELECTRONICS, RM 408, KOREA SCIENCE & TECHNOLOGY BLDG, 635-4, YEOKSAM-DONG, KANGNAM-GU, SEOUL, 135-703, SOUTH KOREA 2009
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://scholars.utp.edu.my/id/eprint/2345/ http://scholars.utp.edu.my/id/eprint/2345/1/SAMPLE_PAPER_PDF.pdf

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