Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications
This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high volta...
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| Format: | Article |
| Language: | English |
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KOREAN INST POWER ELECTRONICS, RM 408, KOREA SCIENCE & TECHNOLOGY BLDG, 635-4, YEOKSAM-DONG, KANGNAM-GU, SEOUL, 135-703, SOUTH KOREA
2009
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| Online Access: | http://scholars.utp.edu.my/id/eprint/2345/ http://scholars.utp.edu.my/id/eprint/2345/1/SAMPLE_PAPER_PDF.pdf |
| _version_ | 1848659234349121536 |
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| author | Nor Zaihar, Yahaya Mumtaj Begam Kassim, Raethar Mohammad, Awan |
| author_facet | Nor Zaihar, Yahaya Mumtaj Begam Kassim, Raethar Mohammad, Awan |
| author_sort | Nor Zaihar, Yahaya |
| building | UTP Institutional Repository |
| collection | Online Access |
| description | This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device's capability and characteristics in applications using the GaN power converter design. |
| first_indexed | 2025-11-13T07:27:11Z |
| format | Article |
| id | oai:scholars.utp.edu.my:2345 |
| institution | Universiti Teknologi Petronas |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-13T07:27:11Z |
| publishDate | 2009 |
| publisher | KOREAN INST POWER ELECTRONICS, RM 408, KOREA SCIENCE & TECHNOLOGY BLDG, 635-4, YEOKSAM-DONG, KANGNAM-GU, SEOUL, 135-703, SOUTH KOREA |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | oai:scholars.utp.edu.my:23452017-01-19T08:25:30Z http://scholars.utp.edu.my/id/eprint/2345/ Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications Nor Zaihar, Yahaya Mumtaj Begam Kassim, Raethar Mohammad, Awan TK Electrical engineering. Electronics Nuclear engineering This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device's capability and characteristics in applications using the GaN power converter design. KOREAN INST POWER ELECTRONICS, RM 408, KOREA SCIENCE & TECHNOLOGY BLDG, 635-4, YEOKSAM-DONG, KANGNAM-GU, SEOUL, 135-703, SOUTH KOREA 2009-01-20 Article PeerReviewed application/pdf en http://scholars.utp.edu.my/id/eprint/2345/1/SAMPLE_PAPER_PDF.pdf Nor Zaihar, Yahaya and Mumtaj Begam Kassim, Raethar and Mohammad, Awan (2009) Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications. JOURNAL OF POWER ELECTRONICS , 9 (1 ). 36-42 . ISSN 1598-2092 http://apps.isiknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=16&SID=X212JDdPAc7358p5C3D&page=1&doc=1 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Nor Zaihar, Yahaya Mumtaj Begam Kassim, Raethar Mohammad, Awan Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications |
| title | Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications |
| title_full | Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications |
| title_fullStr | Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications |
| title_full_unstemmed | Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications |
| title_short | Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications |
| title_sort | review on gallium nitride hemt device technology for high frequency converter applications |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://scholars.utp.edu.my/id/eprint/2345/ http://scholars.utp.edu.my/id/eprint/2345/ http://scholars.utp.edu.my/id/eprint/2345/1/SAMPLE_PAPER_PDF.pdf |