APA (7th ed.) Citation

Nor Zaihar, Y., Mumtaj Begam Kassim, R., & Mohammad, A. (2009). Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications. KOREAN INST POWER ELECTRONICS, RM 408, KOREA SCIENCE & TECHNOLOGY BLDG, 635-4, YEOKSAM-DONG, KANGNAM-GU, SEOUL, 135-703, SOUTH KOREA.

Chicago Style (17th ed.) Citation

Nor Zaihar, Yahaya, Raethar Mumtaj Begam Kassim, and Awan Mohammad. Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications. KOREAN INST POWER ELECTRONICS, RM 408, KOREA SCIENCE & TECHNOLOGY BLDG, 635-4, YEOKSAM-DONG, KANGNAM-GU, SEOUL, 135-703, SOUTH KOREA, 2009.

MLA (9th ed.) Citation

Nor Zaihar, Yahaya, et al. Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications. KOREAN INST POWER ELECTRONICS, RM 408, KOREA SCIENCE & TECHNOLOGY BLDG, 635-4, YEOKSAM-DONG, KANGNAM-GU, SEOUL, 135-703, SOUTH KOREA, 2009.