Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs

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Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs

In this work, the emission efficiency of InxGa1-xN based light emitting diodes (LEDs) had been numerically investigated with the variation of the number of quantum well. From our calculation, we found that non-uniformity of carriers distribution (especially electron) in the wells leads to serious in...

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Bibliographic Details
Main Authors:	Zainal, N., Azimah, E., Hassan, Z., Abu Hassan, H., Hashim, M.R.
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2014
Online Access:	http://journalarticle.ukm.my/7819/ http://journalarticle.ukm.my/7819/1/13_N._Zainal.pdf

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