A Review on modeling the channel potential in multi-gate MOSFETs
This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enabl...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universiti Kebangsaan Malaysia
2014
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| Online Access: | http://journalarticle.ukm.my/7174/ http://journalarticle.ukm.my/7174/1/07_Hossein_Mohammadi.pdf |
| _version_ | 1848811392828702720 |
|---|---|
| author | Hossein Mohammadi, Huda Abdullah, Chang, Fu Dee |
| author_facet | Hossein Mohammadi, Huda Abdullah, Chang, Fu Dee |
| author_sort | Hossein Mohammadi, |
| building | UKM Institutional Repository |
| collection | Online Access |
| description | This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly. |
| first_indexed | 2025-11-14T23:45:41Z |
| format | Article |
| id | oai:generic.eprints.org:7174 |
| institution | Universiti Kebangasaan Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T23:45:41Z |
| publishDate | 2014 |
| publisher | Universiti Kebangsaan Malaysia |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | oai:generic.eprints.org:71742016-12-14T06:43:18Z http://journalarticle.ukm.my/7174/ A Review on modeling the channel potential in multi-gate MOSFETs Hossein Mohammadi, Huda Abdullah, Chang, Fu Dee This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly. Universiti Kebangsaan Malaysia 2014-06 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/7174/1/07_Hossein_Mohammadi.pdf Hossein Mohammadi, and Huda Abdullah, and Chang, Fu Dee (2014) A Review on modeling the channel potential in multi-gate MOSFETs. Sains Malaysiana, 43 (6). pp. 861-866. ISSN 0126-6039 http://www.ukm.my/jsm/ |
| spellingShingle | Hossein Mohammadi, Huda Abdullah, Chang, Fu Dee A Review on modeling the channel potential in multi-gate MOSFETs |
| title | A Review on modeling the channel potential in multi-gate MOSFETs |
| title_full | A Review on modeling the channel potential in multi-gate MOSFETs |
| title_fullStr | A Review on modeling the channel potential in multi-gate MOSFETs |
| title_full_unstemmed | A Review on modeling the channel potential in multi-gate MOSFETs |
| title_short | A Review on modeling the channel potential in multi-gate MOSFETs |
| title_sort | review on modeling the channel potential in multi-gate mosfets |
| url | http://journalarticle.ukm.my/7174/ http://journalarticle.ukm.my/7174/ http://journalarticle.ukm.my/7174/1/07_Hossein_Mohammadi.pdf |