Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors

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Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors

Spin field-effect transistors (SpinFETs) are promising candidates for future integrated microelectronic circuits. A SpinFET is composed of two ferromagnetic contacts (source and drain), which sandwich a semiconductor channel. Current modulation is achieved by electrically tuning the gate voltage dep...

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Bibliographic Details
Main Authors:	Dmitri Osintsev, Viktor Sverdlov, Alexander Makarov, Siegfried Selberherr
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2013
Online Access:	http://journalarticle.ukm.my/5905/ http://journalarticle.ukm.my/5905/1/13%2520Dmitri%2520Osintsev.pdf

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