Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors
Spin field-effect transistors (SpinFETs) are promising candidates for future integrated microelectronic circuits. A SpinFET is composed of two ferromagnetic contacts (source and drain), which sandwich a semiconductor channel. Current modulation is achieved by electrically tuning the gate voltage dep...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Universiti Kebangsaan Malaysia
2013
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| Online Access: | http://journalarticle.ukm.my/5905/ http://journalarticle.ukm.my/5905/1/13%2520Dmitri%2520Osintsev.pdf |
| _version_ | 1848810982745309184 |
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| author | Dmitri Osintsev, Viktor Sverdlov, Alexander Makarov, Siegfried Selberherr, |
| author_facet | Dmitri Osintsev, Viktor Sverdlov, Alexander Makarov, Siegfried Selberherr, |
| author_sort | Dmitri Osintsev, |
| building | UKM Institutional Repository |
| collection | Online Access |
| description | Spin field-effect transistors (SpinFETs) are promising candidates for future integrated microelectronic circuits. A SpinFET is composed of two ferromagnetic contacts (source and drain), which sandwich a semiconductor channel. Current modulation is achieved by electrically tuning the gate voltage dependent strength of the spin-orbit interaction in the semiconductor region. We investigated the properties of SpinFETs for various parameters - the band mismatch, the barrier height between the contacts and the channel and the strength of the spin-orbit coupling, for various temperatures. We demonstrated that the creation of Schottky barriers between the channel and the contacts guarantees a pronounced modulation of the magnetoresistance sufficient to open a possibility to operate SpinFETs at room temperature. We also demonstrated that silicon fins with [100] orientation exhibit a stronger dependence on the value of the spin-orbit interaction and are thus preferable for practical realization of silicon-based SpinFETs. |
| first_indexed | 2025-11-14T23:39:10Z |
| format | Article |
| id | oai:generic.eprints.org:5905 |
| institution | Universiti Kebangasaan Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T23:39:10Z |
| publishDate | 2013 |
| publisher | Universiti Kebangsaan Malaysia |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | oai:generic.eprints.org:59052016-12-14T06:39:49Z http://journalarticle.ukm.my/5905/ Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors Dmitri Osintsev, Viktor Sverdlov, Alexander Makarov, Siegfried Selberherr, Spin field-effect transistors (SpinFETs) are promising candidates for future integrated microelectronic circuits. A SpinFET is composed of two ferromagnetic contacts (source and drain), which sandwich a semiconductor channel. Current modulation is achieved by electrically tuning the gate voltage dependent strength of the spin-orbit interaction in the semiconductor region. We investigated the properties of SpinFETs for various parameters - the band mismatch, the barrier height between the contacts and the channel and the strength of the spin-orbit coupling, for various temperatures. We demonstrated that the creation of Schottky barriers between the channel and the contacts guarantees a pronounced modulation of the magnetoresistance sufficient to open a possibility to operate SpinFETs at room temperature. We also demonstrated that silicon fins with [100] orientation exhibit a stronger dependence on the value of the spin-orbit interaction and are thus preferable for practical realization of silicon-based SpinFETs. Universiti Kebangsaan Malaysia 2013-02 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/5905/1/13%2520Dmitri%2520Osintsev.pdf Dmitri Osintsev, and Viktor Sverdlov, and Alexander Makarov, and Siegfried Selberherr, (2013) Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors. Sains Malaysiana, 42 (2). pp. 205-211. ISSN 0126-6039 http://www.ukm.my/jsm/ |
| spellingShingle | Dmitri Osintsev, Viktor Sverdlov, Alexander Makarov, Siegfried Selberherr, Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors |
| title | Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors |
| title_full | Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors |
| title_fullStr | Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors |
| title_full_unstemmed | Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors |
| title_short | Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors |
| title_sort | current and conductance modulation at elevated temperature in silicon and inas-based spin field-effect transistors |
| url | http://journalarticle.ukm.my/5905/ http://journalarticle.ukm.my/5905/ http://journalarticle.ukm.my/5905/1/13%2520Dmitri%2520Osintsev.pdf |