Surface reaction of undoped AlGaN/GaN HEMT based two terminal device in H+ and OH- ion-contained aqueous solution

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Surface reaction of undoped AlGaN/GaN HEMT based two terminal device in H+ and OH- ion-contained aqueous solution

Gallium nitride is considered as the most promising material for liquid-phase sensor applications due to its chemical stability and high internal piezoelectric polarization. In this work, the sensing responses of undoped-AlGaN/GaN two terminal devices upon exposure to various pH levels in aqueous so...

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Bibliographic Details
Main Authors:	Mastura Shafinaz Zainal Abidin, Shahjahan, Abdul Manaf Hashim
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2013
Online Access:	http://journalarticle.ukm.my/5904/ http://journalarticle.ukm.my/5904/1/12%2520Mastura.pdf

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