Fabrication and transport performance characterization of chemically-doped three-branch junction graphene device

A graphene-based three-branch nanojunction (TBJ) device having nanowire width of 200 nm was successfully fabricated. The layer number of graphene prepared by mechanical exfoliation was determined using a simple optical contrast method which showed good agreement with theoretical value. n-type doping...

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Main Authors: Shaharin Fadzli Abd Rahman, Seiya Kasai, Abdul Manaf Hashim
Format: Article
Language:English
Published: Universiti Kebangsaan Malaysia 2013
Online Access:http://journalarticle.ukm.my/5902/
http://journalarticle.ukm.my/5902/1/10%2520Shaharin.pdf
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author Shaharin Fadzli Abd Rahman,
Seiya Kasai,
Abdul Manaf Hashim,
author_facet Shaharin Fadzli Abd Rahman,
Seiya Kasai,
Abdul Manaf Hashim,
author_sort Shaharin Fadzli Abd Rahman,
building UKM Institutional Repository
collection Online Access
description A graphene-based three-branch nanojunction (TBJ) device having nanowire width of 200 nm was successfully fabricated. The layer number of graphene prepared by mechanical exfoliation was determined using a simple optical contrast method which showed good agreement with theoretical value. n-type doping by Polyethylene imines (PEI) was done to control the position of Dirac point. Baking and PEI doping was found to decrease contact resistance and increase the carrier mobility. The chemically-doped TBJ graphene showed carrier mobility of 20000 cm2/Vs, which gave related mean free path of 175 nm.
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spelling oai:generic.eprints.org:59022016-12-14T06:39:48Z http://journalarticle.ukm.my/5902/ Fabrication and transport performance characterization of chemically-doped three-branch junction graphene device Shaharin Fadzli Abd Rahman, Seiya Kasai, Abdul Manaf Hashim, A graphene-based three-branch nanojunction (TBJ) device having nanowire width of 200 nm was successfully fabricated. The layer number of graphene prepared by mechanical exfoliation was determined using a simple optical contrast method which showed good agreement with theoretical value. n-type doping by Polyethylene imines (PEI) was done to control the position of Dirac point. Baking and PEI doping was found to decrease contact resistance and increase the carrier mobility. The chemically-doped TBJ graphene showed carrier mobility of 20000 cm2/Vs, which gave related mean free path of 175 nm. Universiti Kebangsaan Malaysia 2013-02 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/5902/1/10%2520Shaharin.pdf Shaharin Fadzli Abd Rahman, and Seiya Kasai, and Abdul Manaf Hashim, (2013) Fabrication and transport performance characterization of chemically-doped three-branch junction graphene device. Sains Malaysiana, 42 (2). pp. 187-192. ISSN 0126-6039 http://www.ukm.my/jsm/
spellingShingle Shaharin Fadzli Abd Rahman,
Seiya Kasai,
Abdul Manaf Hashim,
Fabrication and transport performance characterization of chemically-doped three-branch junction graphene device
title Fabrication and transport performance characterization of chemically-doped three-branch junction graphene device
title_full Fabrication and transport performance characterization of chemically-doped three-branch junction graphene device
title_fullStr Fabrication and transport performance characterization of chemically-doped three-branch junction graphene device
title_full_unstemmed Fabrication and transport performance characterization of chemically-doped three-branch junction graphene device
title_short Fabrication and transport performance characterization of chemically-doped three-branch junction graphene device
title_sort fabrication and transport performance characterization of chemically-doped three-branch junction graphene device
url http://journalarticle.ukm.my/5902/
http://journalarticle.ukm.my/5902/
http://journalarticle.ukm.my/5902/1/10%2520Shaharin.pdf