Effect of TMAH etching duration on the formation of silicon nanowire transistor patterned by AFM nanolithography

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Effect of TMAH etching duration on the formation of silicon nanowire transistor patterned by AFM nanolithography

Atomic force microscopy (AFM) lithography was applied to produce nanoscale pattern for silicon nanowire transistor fabrication. This technique takes advantage of imaging facility of AFM and the ability of probe movement controlling over the sample surface to create nanopatterns. A conductive AFM tip...

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Bibliographic Details
Main Authors:	Sabar Hutagalung, D., Kam Lew, C.
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2012
Online Access:	http://journalarticle.ukm.my/5425/ http://journalarticle.ukm.my/5425/1/13%2520Sabar.pdf

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