Effect of annealing temperature of sol-gel TiO2 buffer layer on microstructure and electrical properties of Ba0.6Sr0.4TiO3 films

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Effect of annealing temperature of sol-gel TiO2 buffer layer on microstructure and electrical properties of Ba0.6Sr0.4TiO3 films

Ba0.6Sr0.4TiO3 (BST) thin films were prepared on TiO2 buffer layers. The buffer layers were prepared using sol-gel method, followed by annealing process at different temperature from 300 to 55oC with 50oC interval for 30 min in air. The microstructure and electrical properties of BST were then inves...

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Bibliographic Details
Main Authors:	Ibrahim, N.B, Yusrianto, E, Zalita, Z, Ibarahim, Z
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2012
Online Access:	http://journalarticle.ukm.my/3587/ http://journalarticle.ukm.my/3587/1/10%2520N.B.%2520Ibrahim.pdf

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