Effect of plasma power and flow rate of silane gas on diameter of silicon nanowires grown by plasma enhanced chemical vapor deposition

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Effect of plasma power and flow rate of silane gas on diameter of silicon nanowires grown by plasma enhanced chemical vapor deposition

Silicon nanowires (SiNWs) have been synthesized by plasma enhanced chemical vapor deposition (PECVD) at different power for generation of plasma and different flow rate of silane gas. Silane (10% SiH4 in Ar) gas with flow rate ranging between 6-15 standard cubic centimeter per minute(sccm) were empl...

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Bibliographic Details
Main Authors:	Habib Hamidinezhad, Yussof Wahab, Zulkafli Othaman, Imam Sumpono
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2011
Online Access:	http://journalarticle.ukm.my/2449/ http://journalarticle.ukm.my/2449/1/14_Habib_Hamidinezhad.pdf

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