Characterization of Ge Nanostructures embedded inside porous silicon for photonics application

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Characterization of Ge Nanostructures embedded inside porous silicon for photonics application

In this work we prepared germanium nanostructures by means of filling the material inside porous silicon (PS) using conventional and cost effective technique, thermal evaporator. The PS acts as patterned substrate. It was prepared by anodization of silicon wafer in ethanoic hydrofluoric acid (HF)....

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Bibliographic Details
Main Authors:	Abd Rahim .A.F, Hashim .M.R, Ali .N.K
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2011
Online Access:	http://journalarticle.ukm.my/2410/ http://journalarticle.ukm.my/2410/1/02_Abd_Rahim.pdf

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