Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell

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Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell

In this study, the indium gallium nitride (InxGa1-xN) p-n junction solar cells were optimized to achieve the highest conversion efficiency. The InxGa1-xN p-n junction solar cells with the whole indium mole fraction (0 ≤ x ≤ 1) were simulated using SCAPS-1D software. Optimization of the p- and n-InxG...

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Bibliographic Details
Main Authors:	Manzoor, Habib Ullah, Tan, Aik Kwan, Ng, Sha Shiong, Zainuriah Hassan
Format:	Article
Language:	English
Published:	Penerbit Universiti Kebangsaan Malaysia 2022
Online Access:	http://journalarticle.ukm.my/19488/ http://journalarticle.ukm.my/19488/1/24.pdf

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