Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell
In this study, the indium gallium nitride (InxGa1-xN) p-n junction solar cells were optimized to achieve the highest conversion efficiency. The InxGa1-xN p-n junction solar cells with the whole indium mole fraction (0 ≤ x ≤ 1) were simulated using SCAPS-1D software. Optimization of the p- and n-InxG...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Penerbit Universiti Kebangsaan Malaysia
2022
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| Online Access: | http://journalarticle.ukm.my/19488/ http://journalarticle.ukm.my/19488/1/24.pdf |
| _version_ | 1848814855331512320 |
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| author | Manzoor, Habib Ullah Tan, Aik Kwan Ng, Sha Shiong Zainuriah Hassan, |
| author_facet | Manzoor, Habib Ullah Tan, Aik Kwan Ng, Sha Shiong Zainuriah Hassan, |
| author_sort | Manzoor, Habib Ullah |
| building | UKM Institutional Repository |
| collection | Online Access |
| description | In this study, the indium gallium nitride (InxGa1-xN) p-n junction solar cells were optimized to achieve the highest conversion efficiency. The InxGa1-xN p-n junction solar cells with the whole indium mole fraction (0 ≤ x ≤ 1) were simulated using SCAPS-1D software. Optimization of the p- and n-InxGa1-xN layer’s thickness and carrier density were also carried out. The thickness and carrier density of each layer was varied from 0.01 to 1.50 μm and 1015 to 1020 cm-3. The simulation results showed that the highest conversion efficiency of 23.11% was achieved with x = 0.6. The thickness (carrier density) of the p- and n-layers for this In0.6Ga0.4N p-n junction solar cell are 0.01 (1020) and 1.50 μm (1019 cm-3), respectively. Simulation results also showed that the conversion efficiency is more sensitive to the variations of layer’s thickness and carrier density of the top p-InxGa1-xN layer than the bottom n-InxGa1-xN layer. Besides that, the results also demonstrated that thinner p-InxGa1-xN layer with higher carrier density offers better conversion efficiency. |
| first_indexed | 2025-11-15T00:40:43Z |
| format | Article |
| id | oai:generic.eprints.org:19488 |
| institution | Universiti Kebangasaan Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T00:40:43Z |
| publishDate | 2022 |
| publisher | Penerbit Universiti Kebangsaan Malaysia |
| recordtype | eprints |
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| spelling | oai:generic.eprints.org:194882022-08-26T02:34:33Z http://journalarticle.ukm.my/19488/ Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell Manzoor, Habib Ullah Tan, Aik Kwan Ng, Sha Shiong Zainuriah Hassan, In this study, the indium gallium nitride (InxGa1-xN) p-n junction solar cells were optimized to achieve the highest conversion efficiency. The InxGa1-xN p-n junction solar cells with the whole indium mole fraction (0 ≤ x ≤ 1) were simulated using SCAPS-1D software. Optimization of the p- and n-InxGa1-xN layer’s thickness and carrier density were also carried out. The thickness and carrier density of each layer was varied from 0.01 to 1.50 μm and 1015 to 1020 cm-3. The simulation results showed that the highest conversion efficiency of 23.11% was achieved with x = 0.6. The thickness (carrier density) of the p- and n-layers for this In0.6Ga0.4N p-n junction solar cell are 0.01 (1020) and 1.50 μm (1019 cm-3), respectively. Simulation results also showed that the conversion efficiency is more sensitive to the variations of layer’s thickness and carrier density of the top p-InxGa1-xN layer than the bottom n-InxGa1-xN layer. Besides that, the results also demonstrated that thinner p-InxGa1-xN layer with higher carrier density offers better conversion efficiency. Penerbit Universiti Kebangsaan Malaysia 2022-05 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/19488/1/24.pdf Manzoor, Habib Ullah and Tan, Aik Kwan and Ng, Sha Shiong and Zainuriah Hassan, (2022) Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell. Sains Malaysiana, 51 (5). pp. 1567-1576. ISSN 0126-6039 https://www.ukm.my/jsm/malay_journals/jilid51bil5_2022/KandunganJilid51Bil5_2022.html |
| spellingShingle | Manzoor, Habib Ullah Tan, Aik Kwan Ng, Sha Shiong Zainuriah Hassan, Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell |
| title | Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell |
| title_full | Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell |
| title_fullStr | Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell |
| title_full_unstemmed | Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell |
| title_short | Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell |
| title_sort | carrier density and thickness optimization of inxga1-xn layer by scaps-1d simulation for high efficiency iii-v solar cell |
| url | http://journalarticle.ukm.my/19488/ http://journalarticle.ukm.my/19488/ http://journalarticle.ukm.my/19488/1/24.pdf |