Enhanced performance of quantum dots sensitized solar cell utilizing copper indium sulfide and reduced-graphene oxide with the presence of silver sulfide
In this study, rGO/CuInS2 has been successfully prepared onto TiO2 thin film using solvothermal method followed by Ag2 S deposition layer by successive ionic layer adsorption and reaction deposition (SILAR) technique. The morphology, structural, and optical properties of TiO2 /rGO/CuInS2 t...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Penerbit Universiti Kebangsaan Malaysia
2020
|
| Online Access: | http://journalarticle.ukm.my/16164/ http://journalarticle.ukm.my/16164/1/11.pdf |
| Summary: | In this study, rGO/CuInS2
has been successfully prepared onto TiO2
thin film using solvothermal method followed by
Ag2
S deposition layer by successive ionic layer adsorption and reaction deposition (SILAR) technique. The morphology,
structural, and optical properties of TiO2
/rGO/CuInS2
thin film were investigated by using field emission scanning
electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), atomic force microscope (AFM), X-ray
diffraction (XRD) and ultra-violet-visible near infrared spectrophotometer (UV-Vis). For electrical properties,
electrochemical impedance spectra (EIS) and current-voltage (I-V) test investigated the interfacial charge-transfer
resistances and the conversion efficiency of the samples. Results showed that the average particles size of the samples
ranged from ±46.52 to ±53.97 nm in diameter. UV-VIS analysis indicated that TiO2
/rGO/CuInS2
thin film showed better
light absorption capability with the presence of Ag2
S deposition layers. The rGO/CuInS2
quantum dot sensitized with
Ag2
S layers exhibit a photovoltaic power conversion efficiency of 0.33%, which has great improvement of short circuit
current (ISC) comparing with that of rGO/CuInS2
quantum dot sensitized without Ag2
S deposition layers. |
|---|