Structural and photoluminescence analysis on the implantation of carbon and proton for the creation of damage-assisted emission in silicon

Structural and photoluminescence analysis on the implantation of carbon and proton for the creation of damage-assisted emission in silicon

We study the induced defects in the depth profiling of the silicon structure after being implanted with carbon and followed by high energy proton irradiation. It has been reported before that the formation of the optically active pointdefect, specifically the G-centre is due to the implantation and...

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Bibliographic Details
Main Authors: Nurul Ellena Abdul Razak, Madhuku, Morgan, Ahmad, Ishaq, Burhanuddin Yeop Majlis, Chang, Fu Dee, Dilla Duryha Berhanuddin
Format: Article
Language:English
Published: Penerbit Universiti Kebangsaan Malaysia 2020
Online Access:http://journalarticle.ukm.my/16159/
http://journalarticle.ukm.my/16159/1/6.pdf

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