Feasibility study of GaN-based MEMS capacitive microphone using finite element method

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Feasibility study of GaN-based MEMS capacitive microphone using finite element method

Gallium nitride (GaN) is an excellent choice of semiconductor material due to its optoelectronic, mechanical and wide bandgap properties which are highly demanded by high-power and radio-frequency (RF) electronics but also widely employed for the fabrication of Light Emitting Diode (LED). In this p...

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Bibliographic Details
Main Authors:	Rahmat Zaki Auliya, M. F. Mohd. Razip Wee, Subandi, Ayub, Muhammad Ramdzan Buyong, Burhanuddin Yeop Majlis
Format:	Article
Language:	English
Published:	Penerbit Universiti Kebangsaan Malaysia 2020
Online Access:	http://journalarticle.ukm.my/14847/ http://journalarticle.ukm.my/14847/1/12.pdf

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