G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation

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G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation

The interest in the G-centre is driven by reports that it can lase in silicon. To further this, the transfer of this technology from bulk silicon to a silicon-on-insulator (SOI) platform is an essential requirement to progress to lasing and optical amplification on silicon. We report on the efficien...

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Bibliographic Details
Main Authors:	D.D. Berhanuddin, N.E.A. Razak, Lourenço, M.A., B.Y. Majlis, Homewood, K.P.
Format:	Article
Language:	English
Published:	Penerbit Universiti Kebangsaan Malaysia 2019
Online Access:	http://journalarticle.ukm.my/13717/ http://journalarticle.ukm.my/13717/1/12%20D.D.%20Berhanuddin.pdf

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