G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation
The interest in the G-centre is driven by reports that it can lase in silicon. To further this, the transfer of this technology from bulk silicon to a silicon-on-insulator (SOI) platform is an essential requirement to progress to lasing and optical amplification on silicon. We report on the efficien...
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| Format: | Article |
| Language: | English |
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Penerbit Universiti Kebangsaan Malaysia
2019
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| Online Access: | http://journalarticle.ukm.my/13717/ http://journalarticle.ukm.my/13717/1/12%20D.D.%20Berhanuddin.pdf |
| _version_ | 1848813355070914560 |
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| author | D.D. Berhanuddin, N.E.A. Razak, Lourenço, M.A. B.Y. Majlis, Homewood, K.P. |
| author_facet | D.D. Berhanuddin, N.E.A. Razak, Lourenço, M.A. B.Y. Majlis, Homewood, K.P. |
| author_sort | D.D. Berhanuddin, |
| building | UKM Institutional Repository |
| collection | Online Access |
| description | The interest in the G-centre is driven by reports that it can lase in silicon. To further this, the transfer of this technology from bulk silicon to a silicon-on-insulator (SOI) platform is an essential requirement to progress to lasing and optical amplification on silicon. We report on the efficient generation of the lasing G-centre in SOI substrates by proton irradiation of carbon ion implants. Following carbon implantation samples were annealed and then proton irradiated to form the G-centre and characterized by photoluminescence measurements. The temperature dependence of the emission and the behaviour of the G-centre with post proton annealing were investigated and results are compared with identical implants in control samples of bulk silicon. Overall, we find that the optically active G-centre can be up to 300% brighter and has better survivability over a wider process window in SOI than in bulk silicon. |
| first_indexed | 2025-11-15T00:16:52Z |
| format | Article |
| id | oai:generic.eprints.org:13717 |
| institution | Universiti Kebangasaan Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T00:16:52Z |
| publishDate | 2019 |
| publisher | Penerbit Universiti Kebangsaan Malaysia |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | oai:generic.eprints.org:137172019-11-29T09:03:23Z http://journalarticle.ukm.my/13717/ G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation D.D. Berhanuddin, N.E.A. Razak, Lourenço, M.A. B.Y. Majlis, Homewood, K.P. The interest in the G-centre is driven by reports that it can lase in silicon. To further this, the transfer of this technology from bulk silicon to a silicon-on-insulator (SOI) platform is an essential requirement to progress to lasing and optical amplification on silicon. We report on the efficient generation of the lasing G-centre in SOI substrates by proton irradiation of carbon ion implants. Following carbon implantation samples were annealed and then proton irradiated to form the G-centre and characterized by photoluminescence measurements. The temperature dependence of the emission and the behaviour of the G-centre with post proton annealing were investigated and results are compared with identical implants in control samples of bulk silicon. Overall, we find that the optically active G-centre can be up to 300% brighter and has better survivability over a wider process window in SOI than in bulk silicon. Penerbit Universiti Kebangsaan Malaysia 2019-06 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/13717/1/12%20D.D.%20Berhanuddin.pdf D.D. Berhanuddin, and N.E.A. Razak, and Lourenço, M.A. and B.Y. Majlis, and Homewood, K.P. (2019) G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation. Sains Malaysiana, 48 (6). pp. 1251-1257. ISSN 0126-6039 http://www.ukm.my/jsm/malay_journals/jilid48bil6_2019/KandunganJilid48Bil6_2019.html |
| spellingShingle | D.D. Berhanuddin, N.E.A. Razak, Lourenço, M.A. B.Y. Majlis, Homewood, K.P. G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation |
| title | G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation |
| title_full | G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation |
| title_fullStr | G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation |
| title_full_unstemmed | G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation |
| title_short | G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation |
| title_sort | g-centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and proton irradiation |
| url | http://journalarticle.ukm.my/13717/ http://journalarticle.ukm.my/13717/ http://journalarticle.ukm.my/13717/1/12%20D.D.%20Berhanuddin.pdf |