Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3)
The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Penerbit Universiti Kebangsaan Malaysia
2019
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| Online Access: | http://journalarticle.ukm.my/13711/ http://journalarticle.ukm.my/13711/1/06%20Siti%20Kudnie%20Sahari.pdf |
| _version_ | 1848813353522167808 |
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| author | Siti Kudnie Sahari, Nik Amni Fathi Nik Zaini Fathi, Azrul Azlan Hamzah, Norsuzailina Mohamed Sutan, Zaidi Embong, Suhana Mohamed Sultan, Muhammad Kashif, Marini Sawawi, Hasanah, Lilik Rohana Sapawi, Kuryati Kipli, Abdul Rahman Kram, Nazreen Junaidi, |
| author_facet | Siti Kudnie Sahari, Nik Amni Fathi Nik Zaini Fathi, Azrul Azlan Hamzah, Norsuzailina Mohamed Sutan, Zaidi Embong, Suhana Mohamed Sultan, Muhammad Kashif, Marini Sawawi, Hasanah, Lilik Rohana Sapawi, Kuryati Kipli, Abdul Rahman Kram, Nazreen Junaidi, |
| author_sort | Siti Kudnie Sahari, |
| building | UKM Institutional Repository |
| collection | Online Access |
| description | The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. In current work, the effects of post deposition anneal (PDA) temperature between 400°C and 600°C on the chemical composition of interfacial layer between Ge and Al2O3 were examined by X-ray photoelectron spectroscopy (XPS). Investigation on thermal stability and structural characteristics for gate structure of Al2O3 dielectric grown on Ge by RF sputtering was done by analyzing X-ray photoelectron spectroscopy (XPS) spectra. It is observed that the oxygen deficient region in interfacial layer (IL) is enhanced rather than fully oxidized Al2O3 with increased PDA temperatures. These undesired phenomena caused shrinkage of IL at Ge/Al2O3 interface at higher temperature of 600°C. |
| first_indexed | 2025-11-15T00:16:51Z |
| format | Article |
| id | oai:generic.eprints.org:13711 |
| institution | Universiti Kebangasaan Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T00:16:51Z |
| publishDate | 2019 |
| publisher | Penerbit Universiti Kebangsaan Malaysia |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | oai:generic.eprints.org:137112019-11-29T08:58:33Z http://journalarticle.ukm.my/13711/ Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3) Siti Kudnie Sahari, Nik Amni Fathi Nik Zaini Fathi, Azrul Azlan Hamzah, Norsuzailina Mohamed Sutan, Zaidi Embong, Suhana Mohamed Sultan, Muhammad Kashif, Marini Sawawi, Hasanah, Lilik Rohana Sapawi, Kuryati Kipli, Abdul Rahman Kram, Nazreen Junaidi, The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. In current work, the effects of post deposition anneal (PDA) temperature between 400°C and 600°C on the chemical composition of interfacial layer between Ge and Al2O3 were examined by X-ray photoelectron spectroscopy (XPS). Investigation on thermal stability and structural characteristics for gate structure of Al2O3 dielectric grown on Ge by RF sputtering was done by analyzing X-ray photoelectron spectroscopy (XPS) spectra. It is observed that the oxygen deficient region in interfacial layer (IL) is enhanced rather than fully oxidized Al2O3 with increased PDA temperatures. These undesired phenomena caused shrinkage of IL at Ge/Al2O3 interface at higher temperature of 600°C. Penerbit Universiti Kebangsaan Malaysia 2019-06 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/13711/1/06%20Siti%20Kudnie%20Sahari.pdf Siti Kudnie Sahari, and Nik Amni Fathi Nik Zaini Fathi, and Azrul Azlan Hamzah, and Norsuzailina Mohamed Sutan, and Zaidi Embong, and Suhana Mohamed Sultan, and Muhammad Kashif, and Marini Sawawi, and Hasanah, Lilik and Rohana Sapawi, and Kuryati Kipli, and Abdul Rahman Kram, and Nazreen Junaidi, (2019) Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3). Sains Malaysiana, 48 (6). pp. 1195-1199. ISSN 0126-6039 http://www.ukm.my/jsm/malay_journals/jilid48bil6_2019/KandunganJilid48Bil6_2019.html |
| spellingShingle | Siti Kudnie Sahari, Nik Amni Fathi Nik Zaini Fathi, Azrul Azlan Hamzah, Norsuzailina Mohamed Sutan, Zaidi Embong, Suhana Mohamed Sultan, Muhammad Kashif, Marini Sawawi, Hasanah, Lilik Rohana Sapawi, Kuryati Kipli, Abdul Rahman Kram, Nazreen Junaidi, Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3) |
| title | Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3) |
| title_full | Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3) |
| title_fullStr | Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3) |
| title_full_unstemmed | Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3) |
| title_short | Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3) |
| title_sort | effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (ge) /aluminium oxide (al2o3) |
| url | http://journalarticle.ukm.my/13711/ http://journalarticle.ukm.my/13711/ http://journalarticle.ukm.my/13711/1/06%20Siti%20Kudnie%20Sahari.pdf |