Silicon nanohole arrays fabricated by electron beam
lithography and reactive ion etching

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Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching

The fabrication of silicon nanohole (SiNH) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE) processes is reported. The optimum exposure dose of EBL process was found to be in the range of 210-240 μC/cm2 due to small enlargement of hole diameter after pattern deve...

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Bibliographic Details
Main Authors:	Lita Rahmasari, Mohd Faizol Abdullah, Ahmad Rifqi Md Zain, Abdul Manaf Hashim
Format:	Article
Language:	English
Published:	Penerbit Universiti Kebangsaan Malaysia 2019
Online Access:	http://journalarticle.ukm.my/13706/ http://journalarticle.ukm.my/13706/1/01%20Lita%20Rahmasari.pdf

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