Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching

The fabrication of silicon nanohole (SiNH) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE) processes is reported. The optimum exposure dose of EBL process was found to be in the range of 210-240 μC/cm2 due to small enlargement of hole diameter after pattern deve...

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Main Authors: Lita Rahmasari, Mohd Faizol Abdullah, Ahmad Rifqi Md Zain, Abdul Manaf Hashim
Format: Article
Language:English
Published: Penerbit Universiti Kebangsaan Malaysia 2019
Online Access:http://journalarticle.ukm.my/13706/
http://journalarticle.ukm.my/13706/1/01%20Lita%20Rahmasari.pdf
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author Lita Rahmasari,
Mohd Faizol Abdullah,
Ahmad Rifqi Md Zain,
Abdul Manaf Hashim,
author_facet Lita Rahmasari,
Mohd Faizol Abdullah,
Ahmad Rifqi Md Zain,
Abdul Manaf Hashim,
author_sort Lita Rahmasari,
building UKM Institutional Repository
collection Online Access
description The fabrication of silicon nanohole (SiNH) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE) processes is reported. The optimum exposure dose of EBL process was found to be in the range of 210-240 μC/cm2 due to small enlargement of hole diameter after pattern development process. The anisotropic etching and isotropic etching was achieved at low and high reaction pressures, respectively. As expected, the etching rate increase with time and RF power. A relatively smooth and well-defined NH has been obtained at RF power of 100 W and reaction pressure of 0.08 Torr, which is suitable to be applied for optical waveguide.
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spelling oai:generic.eprints.org:137062019-11-29T08:54:12Z http://journalarticle.ukm.my/13706/ Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching Lita Rahmasari, Mohd Faizol Abdullah, Ahmad Rifqi Md Zain, Abdul Manaf Hashim, The fabrication of silicon nanohole (SiNH) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE) processes is reported. The optimum exposure dose of EBL process was found to be in the range of 210-240 μC/cm2 due to small enlargement of hole diameter after pattern development process. The anisotropic etching and isotropic etching was achieved at low and high reaction pressures, respectively. As expected, the etching rate increase with time and RF power. A relatively smooth and well-defined NH has been obtained at RF power of 100 W and reaction pressure of 0.08 Torr, which is suitable to be applied for optical waveguide. Penerbit Universiti Kebangsaan Malaysia 2019-06 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/13706/1/01%20Lita%20Rahmasari.pdf Lita Rahmasari, and Mohd Faizol Abdullah, and Ahmad Rifqi Md Zain, and Abdul Manaf Hashim, (2019) Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching. Sains Malaysiana, 48 (6). pp. 1157-1161. ISSN 0126-6039 http://www.ukm.my/jsm/malay_journals/jilid48bil6_2019/KandunganJilid48Bil6_2019.html
spellingShingle Lita Rahmasari,
Mohd Faizol Abdullah,
Ahmad Rifqi Md Zain,
Abdul Manaf Hashim,
Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
title Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
title_full Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
title_fullStr Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
title_full_unstemmed Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
title_short Silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
title_sort silicon nanohole arrays fabricated by electron beam lithography and reactive ion etching
url http://journalarticle.ukm.my/13706/
http://journalarticle.ukm.my/13706/
http://journalarticle.ukm.my/13706/1/01%20Lita%20Rahmasari.pdf