Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design
In this study, graphene-on-silicon process technology was developed to fabricate a power rectifier Schottky diode for efficiency improvement in high operating temperature. Trench-MOS-Barrier-Schottky (TMBS) diode structure was used to enhance the device performance. The main objective of this resear...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Penerbit Universiti Kebangsaan Malaysia
2017
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| Online Access: | http://journalarticle.ukm.my/11133/ http://journalarticle.ukm.my/11133/1/18%20Mohd%20Rofei.pdf |
| _version_ | 1848812621802766336 |
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| author | Mohd Rofei Mat Hussin, Muhammad Mahyiddin Ramli, Sharaifah Kamariah Wan Sabli, Iskhandar Md Nasir, Mohd Ismahadi Syono, Wong, H.Y. Mukter Zaman, |
| author_facet | Mohd Rofei Mat Hussin, Muhammad Mahyiddin Ramli, Sharaifah Kamariah Wan Sabli, Iskhandar Md Nasir, Mohd Ismahadi Syono, Wong, H.Y. Mukter Zaman, |
| author_sort | Mohd Rofei Mat Hussin, |
| building | UKM Institutional Repository |
| collection | Online Access |
| description | In this study, graphene-on-silicon process technology was developed to fabricate a power rectifier Schottky diode for efficiency improvement in high operating temperature. Trench-MOS-Barrier-Schottky (TMBS) diode structure was used to enhance the device performance. The main objective of this research was to study the effect of reduced graphene oxide (RGO) deposited on silicon surface for Schottky barrier formation and heat transfer in Schottky junction. The study showed RGO deposited on silicon as a heat spreader could help to reduce the effect of heat generated in the Schottky junction that leads to a leakage current reduction and efficiency improvement in the device. With comparison to the conventional metal silicide (titanium silicide and cobalt silicide), the leakage reduced by two-orders of magnitude when tested under high operating temperature (>100°C). TMBS rectifier diode that uses graphene-based heat spreader could produce highly reliable product able to withstand high temperature operating condition. |
| first_indexed | 2025-11-15T00:05:13Z |
| format | Article |
| id | oai:generic.eprints.org:11133 |
| institution | Universiti Kebangasaan Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T00:05:13Z |
| publishDate | 2017 |
| publisher | Penerbit Universiti Kebangsaan Malaysia |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | oai:generic.eprints.org:111332017-12-21T04:31:37Z http://journalarticle.ukm.my/11133/ Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design Mohd Rofei Mat Hussin, Muhammad Mahyiddin Ramli, Sharaifah Kamariah Wan Sabli, Iskhandar Md Nasir, Mohd Ismahadi Syono, Wong, H.Y. Mukter Zaman, In this study, graphene-on-silicon process technology was developed to fabricate a power rectifier Schottky diode for efficiency improvement in high operating temperature. Trench-MOS-Barrier-Schottky (TMBS) diode structure was used to enhance the device performance. The main objective of this research was to study the effect of reduced graphene oxide (RGO) deposited on silicon surface for Schottky barrier formation and heat transfer in Schottky junction. The study showed RGO deposited on silicon as a heat spreader could help to reduce the effect of heat generated in the Schottky junction that leads to a leakage current reduction and efficiency improvement in the device. With comparison to the conventional metal silicide (titanium silicide and cobalt silicide), the leakage reduced by two-orders of magnitude when tested under high operating temperature (>100°C). TMBS rectifier diode that uses graphene-based heat spreader could produce highly reliable product able to withstand high temperature operating condition. Penerbit Universiti Kebangsaan Malaysia 2017-07 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/11133/1/18%20Mohd%20Rofei.pdf Mohd Rofei Mat Hussin, and Muhammad Mahyiddin Ramli, and Sharaifah Kamariah Wan Sabli, and Iskhandar Md Nasir, and Mohd Ismahadi Syono, and Wong, H.Y. and Mukter Zaman, (2017) Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design. Sains Malaysiana, 46 (7). pp. 1147-1154. ISSN 0126-6039 http://www.ukm.my/jsm/malay_journals/jilid46bil7_2017/KandunganJilid46Bil7_2017.html |
| spellingShingle | Mohd Rofei Mat Hussin, Muhammad Mahyiddin Ramli, Sharaifah Kamariah Wan Sabli, Iskhandar Md Nasir, Mohd Ismahadi Syono, Wong, H.Y. Mukter Zaman, Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design |
| title | Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design |
| title_full | Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design |
| title_fullStr | Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design |
| title_full_unstemmed | Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design |
| title_short | Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design |
| title_sort | fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design |
| url | http://journalarticle.ukm.my/11133/ http://journalarticle.ukm.my/11133/ http://journalarticle.ukm.my/11133/1/18%20Mohd%20Rofei.pdf |