Graphene growth at low temperatures using RF-plasma
enhanced chemical vapour deposition

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Graphene growth at low temperatures using RF-plasma enhanced chemical vapour deposition

The advantage of plasma enhanced chemical vapour deposition (PECVD) method is the ability to deposit thin films at relatively low temperature. Plasma power supports the growth process by decomposing hydrocarbon to carbon radicals which will be deposited later on metal catalyst. In this work, we have...

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Bibliographic Details
Main Authors:	Aishah Khalid, Mohd Ambri Mohamed, Akrajas Ali Umar
Format:	Article
Language:	English
Published:	Penerbit Universiti Kebangsaan Malaysia 2017
Online Access:	http://journalarticle.ukm.my/11129/ http://journalarticle.ukm.my/11129/1/14%20Aishah%20Khalid.pdf

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