Performance characterization of schottky tunneling Graphene Field Effect Transistor at 60 nm gate length

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Performance characterization of schottky tunneling Graphene Field Effect Transistor at 60 nm gate length

A planar Graphene Field-Effect Transistor GFET performance with 60 nm gate length was evaluated in discovering new material to meet the relentless demand for higher performance-power saving features. The ATHENA and ATLAS modules of SILVACO TCAD simulation tool was employed to virtually design and as...

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Bibliographic Details
Main Authors:	Noor Faizah Zainul Abidin, Ibrahim Ahmad, Ker, Pin Jern, P. Susthitha Menon
Format:	Article
Language:	English
Published:	Penerbit Universiti Kebangsaan Malaysia 2017
Online Access:	http://journalarticle.ukm.my/11126/ http://journalarticle.ukm.my/11126/1/11%20Noor%20Faizah.pdf

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