STRUCTURAL AND OPTICAL PROPERTIES OF GaAs1-xBix/AlyGa1-yAs QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY

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STRUCTURAL AND OPTICAL PROPERTIES OF GaAs1-xBix/AlyGa1-yAs QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY

This work reports on the effect of Bi concentration on the structural and optical properties of dilute GaAs(1− x)Bix Single Quantum Well (SQWs) grown by molecular beam epitaxy (MBE) on (001) GaAs substrates. The influence of Bi content has been studied by X-Ray Diffraction (XRD), Raman spectroscopy,...

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Bibliographic Details
Main Author:	Almunyif, Amjad
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2024
Subjects:	quantum wells molecular beam epitaxy semiconductor alloys
Online Access:	https://eprints.nottingham.ac.uk/78355/

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