Investigation of Structural and Optical Properties of Dilute GaAsBi and InGaAsBi Semiconductor Nanostructures Grown by Molecular Beam Epitaxy

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Investigation of Structural and Optical Properties of Dilute GaAsBi and InGaAsBi Semiconductor Nanostructures Grown by Molecular Beam Epitaxy

This thesis investigates the optical and structural properties of GaAs1-xBix thin epitaxial layers and self-assembled InGa(Bi)As quantum dots (QDs) grown on conventional (100) GaAs substrates by Molecular Beam Epitaxy (MBE). The GaAs1-xBix epilayers were grown at different substrate temperatures. Th...

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Bibliographic Details
Main Author:	Alhassni, Amra
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2023
Subjects:	quantum dots molecular beam epitaxy semiconductors
Online Access:	https://eprints.nottingham.ac.uk/73779/

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