Investigation of the electrical and optical properties of advanced semiconductors materials and devices

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Investigation of the electrical and optical properties of advanced semiconductors materials and devices

This thesis reports on an investigation of deep level defects in InAs quantum dots intermediate band solar cells (QD-IBSCs) and InAs/InGaAs quantum dot lasers structures that have applications in photovoltaics and optoelectronic technologies. In fact, it is of paramount importance to understand the...

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Bibliographic Details
Main Author:	AL HUWAYZ, MARYAM
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2022
Subjects:	Advanced semiconductors InAs QD
Online Access:	https://eprints.nottingham.ac.uk/69016/

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