Modelling, fabrication, and characterization of memristor for mitigating the sneak path current in a nano-crossbar memory array

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Modelling, fabrication, and characterization of memristor for mitigating the sneak path current in a nano-crossbar memory array

The semiconductor industry looks ahead to Resistive random-access memory (RRAM), (alternatively known as memristor), a promising emerging non-volatile memory technology that can be developed to become a solution for high-density data storage problems. However, the formation of crossbar arrays with R...

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Bibliographic Details
Main Author:	M, Arya Lekshmi
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2022
Subjects:	non-volatile memory rram cbram sneak path current
Online Access:	https://eprints.nottingham.ac.uk/67214/

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