Modelling, fabrication, and characterization of memristor for mitigating the sneak path current in a nano-crossbar memory array
The semiconductor industry looks ahead to Resistive random-access memory (RRAM), (alternatively known as memristor), a promising emerging non-volatile memory technology that can be developed to become a solution for high-density data storage problems. However, the formation of crossbar arrays with R...
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| Format: | Thesis (University of Nottingham only) |
| Language: | English |
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2022
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| Online Access: | https://eprints.nottingham.ac.uk/67214/ |