Investigation of the optical and electrical properties of dilute nitride compound semiconductors based on GaP

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Investigation of the optical and electrical properties of dilute nitride compound semiconductors based on GaP

The effect of nitrogen (N) incorporation on the optical properties of Gallium phosphide GaP1-xNx (x= 1.4%, 2.1%, and 2.7%) alloys grown by MBE, have been investigated in this thesis. In addition, the influence of adding arsnic (As) and indium (In) on the optical properties of GaAs0.1P0.89N0.01 and I...

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Bibliographic Details
Main Author:	Albalawi, Hind Mohammed
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2019
Subjects:	semiconductors Photoluminescence DLTS GaP
Online Access:	https://eprints.nottingham.ac.uk/56832/

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