Adjustable current-induced magnetization switching utilizing interlayer exchange coupling
Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and out-of-plane anisotropy respectively, are separated by a spacer Ta...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2018
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| Online Access: | https://eprints.nottingham.ac.uk/55024/ |
| _version_ | 1848799103629131776 |
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| author | Sheng, Yu Edmonds, Kevin Ma, Xingqiao Zheng, Houzhi Wang, Kaiyou |
| author_facet | Sheng, Yu Edmonds, Kevin Ma, Xingqiao Zheng, Houzhi Wang, Kaiyou |
| author_sort | Sheng, Yu |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and out-of-plane anisotropy respectively, are separated by a spacer Ta layer, which plays a dual role of inducing antiferromagnetic interlayer coupling, and contributing to the current-induced effective magnetic field through the spin Hall effect. The current-induced magnetization switching behavior can be tuned by pre-magnetizing the in-plane Co layer. The antiferromagnetic exchange coupling field increases with decreasing thickness of the Ta layer, reaching 630 ±5 Oe for a Ta thickness of 1.5nm. The magnitude of the current-induced perpendicular effective magnetic field from spin-orbit torque is 9.2 Oe/(107Acm-2). The large spin Hall angle of Ta, opposite in sign to that of Pt, results in a low critical current density of 9×106A/cm2. This approach is promising for the electrical switching of magnetic memory elements without external magnetic field. |
| first_indexed | 2025-11-14T20:30:21Z |
| format | Article |
| id | nottingham-55024 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T20:30:21Z |
| publishDate | 2018 |
| publisher | Wiley-VCH |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-550242019-06-28T04:30:18Z https://eprints.nottingham.ac.uk/55024/ Adjustable current-induced magnetization switching utilizing interlayer exchange coupling Sheng, Yu Edmonds, Kevin Ma, Xingqiao Zheng, Houzhi Wang, Kaiyou Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and out-of-plane anisotropy respectively, are separated by a spacer Ta layer, which plays a dual role of inducing antiferromagnetic interlayer coupling, and contributing to the current-induced effective magnetic field through the spin Hall effect. The current-induced magnetization switching behavior can be tuned by pre-magnetizing the in-plane Co layer. The antiferromagnetic exchange coupling field increases with decreasing thickness of the Ta layer, reaching 630 ±5 Oe for a Ta thickness of 1.5nm. The magnitude of the current-induced perpendicular effective magnetic field from spin-orbit torque is 9.2 Oe/(107Acm-2). The large spin Hall angle of Ta, opposite in sign to that of Pt, results in a low critical current density of 9×106A/cm2. This approach is promising for the electrical switching of magnetic memory elements without external magnetic field. Wiley-VCH 2018-09-30 Article PeerReviewed application/pdf en https://eprints.nottingham.ac.uk/55024/1/AFM-manuscript-final%20version-March-14th%20%281%29.pdf Sheng, Yu, Edmonds, Kevin, Ma, Xingqiao, Zheng, Houzhi and Wang, Kaiyou (2018) Adjustable current-induced magnetization switching utilizing interlayer exchange coupling. Advanced Electronic Materials, 4 (9). p. 1800224. ISSN 2199-160X https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201800224 doi:10.1002/aelm.201800224 doi:10.1002/aelm.201800224 |
| spellingShingle | Sheng, Yu Edmonds, Kevin Ma, Xingqiao Zheng, Houzhi Wang, Kaiyou Adjustable current-induced magnetization switching utilizing interlayer exchange coupling |
| title | Adjustable current-induced magnetization switching utilizing interlayer exchange coupling |
| title_full | Adjustable current-induced magnetization switching utilizing interlayer exchange coupling |
| title_fullStr | Adjustable current-induced magnetization switching utilizing interlayer exchange coupling |
| title_full_unstemmed | Adjustable current-induced magnetization switching utilizing interlayer exchange coupling |
| title_short | Adjustable current-induced magnetization switching utilizing interlayer exchange coupling |
| title_sort | adjustable current-induced magnetization switching utilizing interlayer exchange coupling |
| url | https://eprints.nottingham.ac.uk/55024/ https://eprints.nottingham.ac.uk/55024/ https://eprints.nottingham.ac.uk/55024/ |