Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling

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Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling

Recently, 3.3 and 6.5 kV power MOSFETs have been introduced. Based on the 3.3 kV device, a 100 A half-bridge power module has been developed, using parallel chips for current scaling and relying exclusively on the use of the transistors body-diode for current free-wheeling (i.e., no antiparallel ext...

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Bibliographic Details
Main Authors:	Hussein, Abdallah, Mouawad, Bassem, Castellazzi, Alberto
Format:	Conference or Workshop Item
Language:	English
Published:	2018
Subjects:	Silicon carbide; SiC MOSFETs; power modules; inverter.
Online Access:	https://eprints.nottingham.ac.uk/54139/

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