Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling
Recently, 3.3 and 6.5 kV power MOSFETs have been introduced. Based on the 3.3 kV device, a 100 A half-bridge power module has been developed, using parallel chips for current scaling and relying exclusively on the use of the transistors body-diode for current free-wheeling (i.e., no antiparallel ext...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
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2018
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| Online Access: | https://eprints.nottingham.ac.uk/54139/ |
| _version_ | 1848799017870295040 |
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| author | Hussein, Abdallah Mouawad, Bassem Castellazzi, Alberto |
| author_facet | Hussein, Abdallah Mouawad, Bassem Castellazzi, Alberto |
| author_sort | Hussein, Abdallah |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Recently, 3.3 and 6.5 kV power MOSFETs have been introduced. Based on the 3.3 kV device, a 100 A half-bridge power module has been developed, using parallel chips for current scaling and relying exclusively on the use of the transistors body-diode for current free-wheeling (i.e., no antiparallel external diode chips are used). This paper presents a thorough parametric characterization of the module switching performance. Single-chip and parallel-chip operation are investigated in both double-pulsea type tests and realistic singlephase inverter operation. |
| first_indexed | 2025-11-14T20:28:59Z |
| format | Conference or Workshop Item |
| id | nottingham-54139 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T20:28:59Z |
| publishDate | 2018 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-541392018-09-11T08:42:42Z https://eprints.nottingham.ac.uk/54139/ Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling Hussein, Abdallah Mouawad, Bassem Castellazzi, Alberto Recently, 3.3 and 6.5 kV power MOSFETs have been introduced. Based on the 3.3 kV device, a 100 A half-bridge power module has been developed, using parallel chips for current scaling and relying exclusively on the use of the transistors body-diode for current free-wheeling (i.e., no antiparallel external diode chips are used). This paper presents a thorough parametric characterization of the module switching performance. Single-chip and parallel-chip operation are investigated in both double-pulsea type tests and realistic singlephase inverter operation. 2018-06-25 Conference or Workshop Item PeerReviewed application/pdf en https://eprints.nottingham.ac.uk/54139/1/Dynamic%20performance%20analysis%20of%20a%203.3%20kV%20SiC%20MOSFET%20half-bridge%20module%20with%20parallel%20chips%20and%20body-diode%20freewheeling.pdf Hussein, Abdallah, Mouawad, Bassem and Castellazzi, Alberto (2018) Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling. In: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 13-17 May 2018, Chicago, USA. Silicon carbide; SiC MOSFETs; power modules; inverter. https://ieeexplore.ieee.org/document/8393703/ 10.1109/ispsd.2018.8393703 10.1109/ispsd.2018.8393703 10.1109/ispsd.2018.8393703 |
| spellingShingle | Silicon carbide; SiC MOSFETs; power modules; inverter. Hussein, Abdallah Mouawad, Bassem Castellazzi, Alberto Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling |
| title | Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling |
| title_full | Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling |
| title_fullStr | Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling |
| title_full_unstemmed | Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling |
| title_short | Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling |
| title_sort | dynamic performance analysis of a 3.3 kv sic mosfet half-bridge module with parallel chips and body-diode freewheeling |
| topic | Silicon carbide; SiC MOSFETs; power modules; inverter. |
| url | https://eprints.nottingham.ac.uk/54139/ https://eprints.nottingham.ac.uk/54139/ https://eprints.nottingham.ac.uk/54139/ |