Moiré-modulated conductance of hexagonal boron nitride tunnel barriers
Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré superlattice between the hBN and an underlying highly ordered pyrolytic graph...
| Main Authors: | , , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Published: |
American Chemical Society
2018
|
| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/52846/ |
| _version_ | 1848798822563577856 |
|---|---|
| author | Summerfield, Alex Kozikov, Aleksey Cheng, Tin S. Davies, Andrew Cho, Yong-Jin Khlobystov, Andrei N. Mellor, Christopher J. Foxon, C. Thomas Watanabe, Kenji Taniguchi, Takashi Eaves, Laurence Novoselov, Kostya S. Novikov, Sergei V. Beton, Peter H. |
| author_facet | Summerfield, Alex Kozikov, Aleksey Cheng, Tin S. Davies, Andrew Cho, Yong-Jin Khlobystov, Andrei N. Mellor, Christopher J. Foxon, C. Thomas Watanabe, Kenji Taniguchi, Takashi Eaves, Laurence Novoselov, Kostya S. Novikov, Sergei V. Beton, Peter H. |
| author_sort | Summerfield, Alex |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré superlattice between the hBN and an underlying highly ordered pyrolytic graphite (HOPG) substrate. This variation is attributed to a periodc modulation of the local density of states and occurs for both exfoliated hBN barriers and epitaxially grown layers. The epitaxial barriers also exhibit enhanced conductance at localized subnanometer regions which are attributed to exposure of the substrate to a nitrogen plasma source during the high temperature growth process. Our results show clearly a spatial periodicity of tunnel current due to the formation of a moiré superlattice and we argue that this can provide a mechanism for elastic scattering of charge carriers for similar interfaces embedded in graphene/hBN resonant tunnel diodes. |
| first_indexed | 2025-11-14T20:25:53Z |
| format | Article |
| id | nottingham-52846 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:25:53Z |
| publishDate | 2018 |
| publisher | American Chemical Society |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-528462020-05-04T19:41:37Z https://eprints.nottingham.ac.uk/52846/ Moiré-modulated conductance of hexagonal boron nitride tunnel barriers Summerfield, Alex Kozikov, Aleksey Cheng, Tin S. Davies, Andrew Cho, Yong-Jin Khlobystov, Andrei N. Mellor, Christopher J. Foxon, C. Thomas Watanabe, Kenji Taniguchi, Takashi Eaves, Laurence Novoselov, Kostya S. Novikov, Sergei V. Beton, Peter H. Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré superlattice between the hBN and an underlying highly ordered pyrolytic graphite (HOPG) substrate. This variation is attributed to a periodc modulation of the local density of states and occurs for both exfoliated hBN barriers and epitaxially grown layers. The epitaxial barriers also exhibit enhanced conductance at localized subnanometer regions which are attributed to exposure of the substrate to a nitrogen plasma source during the high temperature growth process. Our results show clearly a spatial periodicity of tunnel current due to the formation of a moiré superlattice and we argue that this can provide a mechanism for elastic scattering of charge carriers for similar interfaces embedded in graphene/hBN resonant tunnel diodes. American Chemical Society 2018-06-18 Article PeerReviewed Summerfield, Alex, Kozikov, Aleksey, Cheng, Tin S., Davies, Andrew, Cho, Yong-Jin, Khlobystov, Andrei N., Mellor, Christopher J., Foxon, C. Thomas, Watanabe, Kenji, Taniguchi, Takashi, Eaves, Laurence, Novoselov, Kostya S., Novikov, Sergei V. and Beton, Peter H. (2018) Moiré-modulated conductance of hexagonal boron nitride tunnel barriers. Nano Letters . ISSN 1530-6984 boron nitride ; epitaxy ; growth ; tunnelling ; superlattice ; moiré ; heterostructure https://pubs.acs.org/doi/10.1021/acs.nanolett.8b01223 doi:10.1021/acs.nanolett.8b01223 doi:10.1021/acs.nanolett.8b01223 |
| spellingShingle | boron nitride ; epitaxy ; growth ; tunnelling ; superlattice ; moiré ; heterostructure Summerfield, Alex Kozikov, Aleksey Cheng, Tin S. Davies, Andrew Cho, Yong-Jin Khlobystov, Andrei N. Mellor, Christopher J. Foxon, C. Thomas Watanabe, Kenji Taniguchi, Takashi Eaves, Laurence Novoselov, Kostya S. Novikov, Sergei V. Beton, Peter H. Moiré-modulated conductance of hexagonal boron nitride tunnel barriers |
| title | Moiré-modulated conductance of hexagonal boron nitride tunnel barriers |
| title_full | Moiré-modulated conductance of hexagonal boron nitride tunnel barriers |
| title_fullStr | Moiré-modulated conductance of hexagonal boron nitride tunnel barriers |
| title_full_unstemmed | Moiré-modulated conductance of hexagonal boron nitride tunnel barriers |
| title_short | Moiré-modulated conductance of hexagonal boron nitride tunnel barriers |
| title_sort | moiré-modulated conductance of hexagonal boron nitride tunnel barriers |
| topic | boron nitride ; epitaxy ; growth ; tunnelling ; superlattice ; moiré ; heterostructure |
| url | https://eprints.nottingham.ac.uk/52846/ https://eprints.nottingham.ac.uk/52846/ https://eprints.nottingham.ac.uk/52846/ |