Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure

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Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure

We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are e...

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Bibliographic Details
Main Authors:	Pierucci, Debora, Zribi, Jihene, Henck, Hugo, Chaste, Julien, Silly, Mathieu G., Bertran, François, Le Fevre, Patrick, Gil, Bernard, Summerfield, Alex, Beton, Peter H., Novikov, Sergei V., Cassabois, Guillaume, Rault, Julien E., Ouerghi, Abdelkarim
Format:	Article
Published:	AIP Publishing 2018
Subjects:	Hexagonal Boron Nitride ; Van der Waals heterostructure ; Angle Resolved Photoemission Spectroscopy ; Molecular Beam Epitaxy
Online Access:	https://eprints.nottingham.ac.uk/52839/

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