Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure
We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are e...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
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AIP Publishing
2018
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| Online Access: | https://eprints.nottingham.ac.uk/52839/ |
| _version_ | 1848798821955403776 |
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| author | Pierucci, Debora Zribi, Jihene Henck, Hugo Chaste, Julien Silly, Mathieu G. Bertran, François Le Fevre, Patrick Gil, Bernard Summerfield, Alex Beton, Peter H. Novikov, Sergei V. Cassabois, Guillaume Rault, Julien E. Ouerghi, Abdelkarim |
| author_facet | Pierucci, Debora Zribi, Jihene Henck, Hugo Chaste, Julien Silly, Mathieu G. Bertran, François Le Fevre, Patrick Gil, Bernard Summerfield, Alex Beton, Peter H. Novikov, Sergei V. Cassabois, Guillaume Rault, Julien E. Ouerghi, Abdelkarim |
| author_sort | Pierucci, Debora |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurements, reflecting the high quality of the h-BN films. The measured valence band maximum located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap 6 eV). These results demonstrate that, although only weak van der Waals interactionsare present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN. |
| first_indexed | 2025-11-14T20:25:52Z |
| format | Article |
| id | nottingham-52839 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:25:52Z |
| publishDate | 2018 |
| publisher | AIP Publishing |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-528392020-05-04T19:41:32Z https://eprints.nottingham.ac.uk/52839/ Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure Pierucci, Debora Zribi, Jihene Henck, Hugo Chaste, Julien Silly, Mathieu G. Bertran, François Le Fevre, Patrick Gil, Bernard Summerfield, Alex Beton, Peter H. Novikov, Sergei V. Cassabois, Guillaume Rault, Julien E. Ouerghi, Abdelkarim We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurements, reflecting the high quality of the h-BN films. The measured valence band maximum located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap 6 eV). These results demonstrate that, although only weak van der Waals interactionsare present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN. AIP Publishing 2018-06-18 Article PeerReviewed Pierucci, Debora, Zribi, Jihene, Henck, Hugo, Chaste, Julien, Silly, Mathieu G., Bertran, François, Le Fevre, Patrick, Gil, Bernard, Summerfield, Alex, Beton, Peter H., Novikov, Sergei V., Cassabois, Guillaume, Rault, Julien E. and Ouerghi, Abdelkarim (2018) Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure. Applied Physics Letters, 112 (25). p. 253102. ISSN 0003-6951 Hexagonal Boron Nitride ; Van der Waals heterostructure ; Angle Resolved Photoemission Spectroscopy ; Molecular Beam Epitaxy https://aip.scitation.org/doi/10.1063/1.5029220 doi:10.1063/1.5029220 doi:10.1063/1.5029220 |
| spellingShingle | Hexagonal Boron Nitride ; Van der Waals heterostructure ; Angle Resolved Photoemission Spectroscopy ; Molecular Beam Epitaxy Pierucci, Debora Zribi, Jihene Henck, Hugo Chaste, Julien Silly, Mathieu G. Bertran, François Le Fevre, Patrick Gil, Bernard Summerfield, Alex Beton, Peter H. Novikov, Sergei V. Cassabois, Guillaume Rault, Julien E. Ouerghi, Abdelkarim Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure |
| title | Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure |
| title_full | Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure |
| title_fullStr | Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure |
| title_full_unstemmed | Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure |
| title_short | Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure |
| title_sort | van der waals epitaxy of two-dimensional single-layer h-bn on graphite by molecular beam epitaxy: electronic properties and band structure |
| topic | Hexagonal Boron Nitride ; Van der Waals heterostructure ; Angle Resolved Photoemission Spectroscopy ; Molecular Beam Epitaxy |
| url | https://eprints.nottingham.ac.uk/52839/ https://eprints.nottingham.ac.uk/52839/ https://eprints.nottingham.ac.uk/52839/ |